| C505-UB290-E1000 |
CREE |
3.5mW; color:green; 3.5-3.9V; ultra bright InGaN LED |
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| C505-XB290-E1000-A |
CREE |
11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
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| C505-XB290-E1000-B |
CREE |
11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
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| CRF-22010-001 |
CREE |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
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| CRF-22010-101 |
CREE |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
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| CRF-22010-TB |
CREE |
50VDC ;66W; evaluation board for CRF-22010 version A (narrowband) |
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| CSD01060A |
CREE |
600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD01060E |
CREE |
600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD04060A |
CREE |
600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD04060B |
CREE |
600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD04060E |
CREE |
600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD05120A |
CREE |
1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, high voltage multipliers |
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| CSD06060A |
CREE |
600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD06060B |
CREE |
600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD06060G |
CREE |
600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD10060A |
CREE |
600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD10060B |
CREE |
600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD10060G |
CREE |
600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD10120D |
CREE |
1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
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| CSD20060D |
CREE |
600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber1 |
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| CXXX-CB230-E1000 |
CREE |
5V; 125mA; super bright LED. For communication handsets, backlighting, high resolution video displays |
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| CXXX-CB290-S0100 |
CREE |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
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| CXXX-MB290-E1000 |
CREE |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
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| CXXX-MB290-S0100 |
CREE |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
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| CXXX-UB290-S1000 |
CREE |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
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| CXXX-UB29X-S0100 |
CREE |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
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| W4NRD0X-0000 |
CREE |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NRD8C-U000 |
CREE |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NXD8C-0000 |
CREE |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NXD8C-L000 |
CREE |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NXD8C-S000 |
CREE |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NXD8D-0000 |
CREE |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NXD8D-S000 |
CREE |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W4NXD8G-0000 |
CREE |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W6NRD0X-0000 |
CREE |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W6NRE0X-0000 |
CREE |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W6NXD0K-0000 |
CREE |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W6NXD0KLSR-0000 |
CREE |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W6NXD3J-0000 |
CREE |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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| W6NXD3K-0000 |
CREE |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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