| 元器件名 | 生产厂商 | 操作 | |
|---|---|---|---|
| W6NXD3L-0000 | CREE | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | 下载 |
| W6PXD3O-0000 | CREE | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | 下载 |