| HN1J02FU |
TOSHIBA |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
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| HN1K02FU |
TOSHIBA |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| HN1K03FU |
TOSHIBA |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| HN1K04FU |
TOSHIBA |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| HN1K05FU |
TOSHIBA |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
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| HN1K06FU |
TOSHIBA |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| HN1L02FU |
TOSHIBA |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| HN1L03FU |
TOSHIBA |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| HN1V01H |
TOSHIBA |
Variable Capacitance Diode AM Radio Band Tuning Applications |
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| HN1V02H |
TOSHIBA |
Variable Capacitance Diode AM Radio Band Tuning Applications |
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| HN2C01FU |
TOSHIBA |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
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| HN2C10FT |
TOSHIBA |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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| HN2C10FU |
TOSHIBA |
RF 2-in-1 Hybrid Transistors |
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| HN2C11FU |
TOSHIBA |
RF 2-in-1 Hybrid Transistors |
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| HN2C12FT |
TOSHIBA |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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| HN2C12FU |
TOSHIBA |
RF 2-in-1 Hybrid Transistors |
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| HN2C13FT |
TOSHIBA |
RF New Products |
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| HN2C14FT |
TOSHIBA |
RF New Products |
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| HN2C26FS |
TOSHIBA |
Transistor for low frequency small-signal amplification 2 in 1 |
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| HN2D01F |
TOSHIBA |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
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| HN2D01FU |
TOSHIBA |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
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| HN2D01JE |
TOSHIBA |
Switching diode |
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| HN2D02FU |
TOSHIBA |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
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| HN2D03F |
TOSHIBA |
Switching diode |
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| HN2E04F |
TOSHIBA |
Multi-chip discrete device (PNP + SW diode) |
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| HN2S01F |
TOSHIBA |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
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| HN2S01FU |
TOSHIBA |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
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| HN2S02FU |
TOSHIBA |
Small-signal Schottky barrier diode |
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| HN2S02JE |
TOSHIBA |
Small-signal Schottky barrier diode |
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| HN2S03FE |
TOSHIBA |
Small-signal Schottky barrier diode |
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| HN2S03FU |
TOSHIBA |
Small-signal Schottky barrier diode |
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| HN2S03T |
TOSHIBA |
Small-signal Schottky barrier diode |
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| HN2S04FU |
TOSHIBA |
Small-signal Schottky barrier diode |
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| HN2V02H |
TOSHIBA |
Variable Capacitance Diode AM Radio Band Tuning Applications |
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| HN3A51F |
TOSHIBA |
Transistor for low frequency small-signal amplification 2 in 1 |
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| HN3B01F |
TOSHIBA |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
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| HN3B02FU |
TOSHIBA |
Transistor Silicon PNP·NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
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| HN3C01F |
TOSHIBA |
RF 2-in-1 Hybrid Transistors |
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| HN3C01FU |
TOSHIBA |
RF 2-in-1 Hybrid Transistors |
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| HN3C02F |
TOSHIBA |
RF 2-in-1 Hybrid Transistors |
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