| 2SK2973 |
MITSUBISHI |
MITSUBISHI RF POWER MOS FET |
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| 2SK2974 |
MITSUBISHI |
MITSUBISHI RF POWER MOS FET |
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| 2SK2975 |
MITSUBISHI |
MITSUBISHI RF POWER MOS FET |
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| 319SPA-V6M20 |
MITSUBISHI |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
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| 319SPA-W6M20 |
MITSUBISHI |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
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| 319SPA-X6M20 |
MITSUBISHI |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
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| 32170 |
MITSUBISHI |
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER |
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| 3802 |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
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| 3820 |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
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| 3850 |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
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| 3886GROUP |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
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| 38C1 |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
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| 38C2 |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER¡¡¡¡¡¡ |
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| 653SEA2MXX |
MITSUBISHI |
Optoelectronics - WDM- DWDM |
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| 74273 |
MITSUBISHI |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESETf |
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| 74LS |
MITSUBISHI |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
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| 74LS244 |
MITSUBISHI |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
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| 74LS273 |
MITSUBISHI |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET) |
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| 7531 GROUP |
MITSUBISHI |
Single Chip 8-Bit CMOS Microcomputer |
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| 7531 GROUP |
MITSUBISHI |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
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| BA01202 |
MITSUBISHI |
GaAs HBT HYBRID IC |
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| BA01203 |
MITSUBISHI |
GaAs HBT HYBRID IC |
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| BA01207 |
MITSUBISHI |
GaAs HBT HYBRID IC |
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| BCR08AM-14 |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR08AM-14 |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
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| BCR08AS-8 |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR08AS-8 |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
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| BCR10CM |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
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| BCR10CM-12 |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR10CM-8 |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR10CS |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
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| BCR10CS |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR10PM |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
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| BCR10PM |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR10UM |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
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| BCR12 |
MITSUBISHI |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
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| BCR12PM-8 |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
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| BCR12UM |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
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| BCR12CM |
MITSUBISHI |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
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| BCR12CM-12 |
MITSUBISHI |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
下载 |