| BFY450S |
Infineon |
HiRel NPN Silicon RF Transistor |
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| BG3123 |
Infineon |
RF-MOSFET - Package: SOT363 |
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| BG3123R |
Infineon |
DUAL N-Channel MOSFET Tetrode |
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| BG3130 |
Infineon |
RF-MOSFET - Package: SOT363 |
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| BG3130R |
Infineon |
RF-MOSFET - Package:SOT363 |
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| BG3140 |
Infineon |
RF-MOSFET - Package: SOT363 |
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| BG3140R |
Infineon |
RF-MOSFET - Package: SOT363 |
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| BG3230 |
Infineon |
RF-MOSFET - Package: SOT363 |
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| BG3230R |
Infineon |
RF-MOSFET - Package: SOT363 |
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| BGA310 |
Infineon |
Silicon bipolar MMIC Amplifier |
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| BGA312 |
Infineon |
Silicon bipolar MMIC Amplifier |
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| BGA318 |
Infineon |
Silicon Bipolar MMIC Amplifier |
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| BGA416 |
Infineon |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 |
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| BGA420 |
Infineon |
Silicon MMIC Amplifier in SIEGET 25 t... |
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| BGA420 |
Infineon |
Silicon MMICs - 20dB LNA, 0...3GHz, 50Ohm, SOT343 |
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| BGA425 |
Infineon |
Silicon MMIC Amplifier in SIEGET 25 t... |
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| BGA427 |
Infineon |
Silicon MMICs - 25dB LNA, 0...3GHz, 50Ohm, SOT343 |
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| BGA427 |
Infineon |
Silicon MMIC Amplifier in SIEGET 25 t... |
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| BGA428 |
Infineon |
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363 |
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| BGA430 |
Infineon |
Silicon MMICs - 30dB LNB Amplifier, 0.9...2.2GHz, SOT363 |
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| BGA612 |
Infineon |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 |
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| BGA614 |
Infineon |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343 |
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| BGA616 |
Infineon |
Broadband MMIC Amplifier |
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| BGA616 |
Infineon |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343 |
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| BGA619 |
Infineon |
Latest Silicon Discretes - High IP3 PCS LNA |
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| BGA622 |
Infineon |
SiGe LNA MMIC |
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| BGA622 |
Infineon |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
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| BGA622GPS |
Infineon |
GPS Low Noise Amplifier using BGA622 |
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| BGA622L7 |
Infineon |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
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| BGB420 |
Infineon |
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 |
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| BGB420E6327 |
Infineon |
MMIC, LNA |
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| BGB540 |
Infineon |
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343 |
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| BGB540LNA |
Infineon |
BGB540 as a 1.85 GHz Low Noise Amplifier |
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| BGB550E6327 |
Infineon |
MMIC, Driver Amplifier |
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| BGC405 |
Infineon |
Active Biased RF Transistor (RF MMIC) |
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| BGC420 |
Infineon |
Self-Biased BFP420 |
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| BGC420E6327 |
Infineon |
MMIC, LNA |
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| BGV503E6359 |
Infineon |
Negative Voltage Generator |
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| BGV503E6433 |
Infineon |
Negative Voltage Generator |
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| BGX400 |
Infineon |
General Purpose Diodes - Silicon Switching Diode halfbridge rectifier |
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