| GES5813 |
General Electric Solid State |
Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. |
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| GES5814 |
General Electric Solid State |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
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| GES5815 |
General Electric Solid State |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
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| GES5816 |
General Electric Solid State |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
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| GES5817 |
General Electric Solid State |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
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| GES5818 |
General Electric Solid State |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
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| GES5819 |
General Electric Solid State |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
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| GES6027 |
General Electric Solid State |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
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| GES6028 |
General Electric Solid State |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
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| GET4870 |
General Electric Solid State |
Silicon unijunction transistor. 30V, 50mA. |
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| GET4871 |
General Electric Solid State |
Silicon unijunction transistor. 30V, 50mA. |
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| H11A5100 |
General Electric Solid State |
H11A520 H11A550 H11A5100 |
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| H11A520 |
General Electric Solid State |
H11A520 H11A550 H11A5100 |
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| H11A550 |
General Electric Solid State |
H11A520 H11A550 H11A5100 |
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| H11B255 |
General Electric Solid State |
Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. |
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| H23A1 |
General Electric Solid State |
MATCHED EMITTED DETECTOR |
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| H23A2 |
General Electric Solid State |
MATCHED EMITTED DETECTOR |
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| H23B1 |
General Electric Solid State |
MATCHED EMITTER DETECTOR PAIR |
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| H23L1 |
General Electric Solid State |
Matched Emitter-Detector Pair H23L1Ð |
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| H74A1 |
General Electric Solid State |
PHOTON COUPLED ISOLATOR |
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| ICL7605 |
General Electric Solid State |
High Reliability Commutating Auto-Zero Instrumentaion Amplifier |
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| ICL8007 |
General Electric Solid State |
High Reliability JFET Input Operational Amplifier |
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| ICL8022 |
General Electric Solid State |
(ICL8021/ICL8023) Low Power Bipolar Operational Amplifier |
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| IRF120 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
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| IRF121 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
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| IRF122 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
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| IRF123 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
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| IRF130 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
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| IRF131 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A.- |
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| IRF153 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
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| IRF220 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
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| IRF221 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
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| IRF222 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
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| IRF223 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
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| IRF151 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
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| IRF152 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
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| IRF132 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
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| IRF133 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A.- |
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| IRF150 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
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| IRF230 |
General Electric Solid State |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
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