W78C438CF-24 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L102Q-70B |
Winbond |
64K X 16 CMOS 3.3V FLASH MEMORY |
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W78C438CF-25 |
Winbond |
8-bit microcontroller |
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W49L102Q-90 |
Winbond |
64K X 16 CMOS 3.3V FLASH MEMORY |
下载 |
W78C438CF-40 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L102Q-90B |
Winbond |
64K X 16 CMOS 3.3V FLASH MEMORY |
下载 |
W78C438CP-24 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L201 |
Winbond |
128K x 16 CMOS FLASH MEMORY |
下载 |
W78C438CP-40 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L201S-70 |
Winbond |
256K X 8 CMOS FLASH MEMORY |
下载 |
W78C438CP/CF |
Winbond |
8-bit MCU w/ ROMless, 256x8 RAM, 40 I/Os, 3 Timers, 1 Serial Port |
下载 |
W49L201S-90 |
Winbond |
256K X 8 CMOS FLASH MEMORY |
下载 |
W78C516 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L201T-70 |
Winbond |
256K X 8 CMOS FLASH MEMORY |
下载 |
W78C516-24 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L201T-90 |
Winbond |
256K X 8 CMOS FLASH MEMORY |
下载 |
W78C516-40 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W78C516F-24 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49L401 |
Winbond |
3.3-Volt Flash |
下载 |
W78C516F-40 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49V002 |
Winbond |
256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
下载 |
W78C516P-24 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49V002 |
Winbond |
256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
下载 |
W78C516P-40 |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49V002,T,P |
Winbond |
3.3-Volt Flash 256Kx8 |
下载 |
W78C51D |
Winbond |
8-BIT MICROCONTROLLER |
下载 |
W49V002A |
Winbond |
3.3-Volt Flash 256Kx8 |
下载 |
W49V002AP |
Winbond |
256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
下载 |
W49V002AQ |
Winbond |
256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
下载 |
W49V002FA |
Winbond |
3.3-Volt Flash 256Kx8 |
下载 |
W49V002FAP |
Winbond |
256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
下载 |
W49V002FAQ |
Winbond |
256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
下载 |
W4NRD0X-0000 |
CREE |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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W4NRD8C-U000 |
CREE |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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W4NXD8C-0000 |
CREE |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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W4NXD8C-L000 |
CREE |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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W4NXD8C-S000 |
CREE |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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W4NXD8D-0000 |
CREE |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
下载 |
W4NXD8D-S000 |
CREE |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
下载 |
W4NXD8G-0000 |
CREE |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
下载 |