| K4E16(7)0411(2)D |
SAMSUNG |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
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| K4E16(7)0811(2)D |
SAMSUNG |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
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| K4E160411D |
SAMSUNG |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E160411D-B |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
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| K4E160411D-F |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
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| K4E160412D |
SAMSUNG |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E160412D-B |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
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| K4E160412D-F |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
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| K4E160811D |
SAMSUNG |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E160811D-B |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
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| K4E160811D-F |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
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| K4E160812D |
SAMSUNG |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E160812D-B |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
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| K4E160812D-F |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
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| K4E170411D |
SAMSUNG |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E170411D-B |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
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| K4E170411D-F |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
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| K4E170412D |
SAMSUNG |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E170412D-B |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
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| K4E170412D-F |
SAMSUNG |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
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| K4E170811D |
SAMSUNG |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E170811D-B |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
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| K4E170811D-F |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
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| K4E170812D |
SAMSUNG |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E170812D-B |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
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| K4E170812D-F |
SAMSUNG |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
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| K4E171611D |
SAMSUNG |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E171611D-J |
SAMSUNG |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
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| K4E171611D-T |
SAMSUNG |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
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| K4E171612D |
SAMSUNG |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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| K4E171612D-J |
SAMSUNG |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
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| K4E171612D-T |
SAMSUNG |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
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| K4G323222A-QC/L70 |
SAMSUNG |
32Mbit SGRAM |
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| K4E660412D-JC_L |
SAMSUNG |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
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| K4E660412D-TC_L |
SAMSUNG |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
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| K4E660412E, K4E640412E |
SAMSUNG |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
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| K4E660412E, K4E640412E |
SAMSUNG |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
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| K4E660811D, K4E640811D |
SAMSUNG |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
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| K4E660812B |
SAMSUNG |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
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| K4E660812B-JC-45 |
SAMSUNG |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
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